Oliver Hilt: search on Z-Library

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1

Gate Reliability Investigation in Normally-off p-type-GaN cap/AlGaN/GaN HEMTs under Forward Bias Stress

Tapajna, Milan, Hilt, Oliver, Bahat Treidel, Eldad, Wuerfl, Joachim, Kuzmik, Jan

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 411 KB

english, 2016

2

Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

Rossetto, Isabella, Meneghini, Matteo, Hilt, Oliver, Bahat-Treidel, Eldad, De Santi, Carlo, Dalcanale, Stefano, Wuerfl, Joachim, Zanoni, Enrico, Meneghesso, Gaudenzio

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 1.73 MB

english, 2016

3

[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Impact of buffer composition on the dynamic on-state resistance of high-voltage AlGaN/GaN HFETs

Hilt, Oliver, Bahat-Treidel, Eldad, Cho, Eunjung, Singwald, Sebastian, Wurfl, Joachim

Year:

2012

Language:

english

File:

PDF, 1.09 MB

english, 2012

4

Challenges to overcome breakdown limitations in lateral Î²-Ga2O3 MOSFET devices

Tetzner, Kornelius, Hilt, Oliver, Popp, Andreas, Bin Anooz, Saud, WÃ¼rfl, Joachim

Journal:

Microelectronics Reliability

Year:

2020

File:

PDF, 523 KB

2020

5

Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Fleury, Clément, Zhytnytska, Rimma, Bychikhin, Sergey, Cappriotti, Mattia, Hilt, Oliver, Visalli, Domenica, Meneghesso, Gaudenzio, Zanoni, Enrico, Würfl, Joachim, Derluyn, Joff, Strasser, Gottfried, P

Journal:

Microelectronics Reliability

Year:

2013

Language:

english

File:

PDF, 1.61 MB

english, 2013

6

Comparative study of NH4OH and HCl etching behaviours on AlGaN surfaces

Rakesh Sohal, Piotr Dudek, Oliver Hilt

Journal:

Applied Surface Science

Year:

2010

Language:

english

File:

PDF, 944 KB

english, 2010

7

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - 70 mΩ/600 V normally-off GaN transistors on SiC and Si substrates

Hilt, Oliver, Zhytnytska, Rimma, Bocker, Jan, Bahat-Treidel, Eldad, Brunner, Frank, Knauer, Arne, Dieckerhoff, Sibylle, Wurfl, Joachim

Year:

2015

Language:

english

File:

PDF, 653 KB

english, 2015

8

[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Novel monolithically integrated bidirectional GaN HEMT

Kuring, Carsten, Hilt, Oliver, Bocker, Jan, Wolf, Mihaela, Dieckerhoff, Sibylle, Wurfl, Joachim

Year:

2018

Language:

english

File:

PDF, 639 KB

english, 2018

9

[IEEE 2019 IEEE Energy Conversion Congress and Exposition (ECCE) - Baltimore, MD, USA (2019.9.29-2019.10.3)] 2019 IEEE Energy Conversion Congress and Exposition (ECCE) - Impact of Substrate Termination on Dynamic On-State Characteristics of a Normally-off Monolithically Integrated Bidirectional GaN HEMT

Kuring, Carsten, Wieczorek, Nick, Hilt, Oliver, Wolf, Mihaela, Bocker, Jan, Wurfl, Joachim, Dieckerhoff, Sibylle

Year:

2019

File:

PDF, 1.27 MB

2019

10

Discussion on “An electric harmonic analyser” before the Scottish Centre, at Glasgow, 9 December, 1924

Badawi, Nasser, Bahat-Treidel, Eldad, Dieckerhoff, Sibylle, Hilt, Oliver, Wurfl, Joachim

Journal:

Journal of the Institution of Electrical Engineers

Year:

1925

Language:

english

File:

PDF, 463 KB

english, 1925

11

Breakdown and dynamic effects in GaN power switching devices

Würfl, Joachim, Hilt, Oliver, Bahat-Treidel, Eldad, Zhytnytska, Rimma, Kotara, Przemyslaw, Krüger, Olaf, Brunner, Frank, Weyers, Markus

Journal:

Physica status solidi

Year:

2013

Language:

english

File:

PDF, 473 KB

english, 2013

12

GaN-Based Vertical n -Channel MISFETs on Free Standing Ammonothermal GaN Substrates

Treidel, Eldad Bahat, Hilt, Oliver, Stöver, Julian, Hoffmann, Veit, Brunner, Frank, Ickert, Karina, Hochheim, Stefan, Naumann, Franziska, Gargouri, Hassan, Martinez, Bryan, Weyers, Markus, Würfl, Joac

Journal:

physica status solidi (a)

Year:

2018

Language:

english

File:

PDF, 907 KB

english, 2018

13

The mobility of positive and negative ions in liquid xenon

Werner F. Schmidt, Oliver Hilt, Eugen Illenberger, Alexey G. Khrapak

Journal:

Radiation Physics and Chemistry

Year:

2005

Language:

english

File:

PDF, 342 KB

english, 2005

14

[IEEE 2015 17th European Conference on Power Electronics and Applications (EPE '15 ECCE Europe) - Geneva, Switzerland (2015.9.8-2015.9.10)] 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) - Experimental analysis and modeling of GaN normally-off HFETs with trapping effects

Bocker, Jan, Just, Hendrik, Hilt, Oliver, Badawi, Nasser, Wurfl, Joachim, Dieckerhoff, Sibylle

Year:

2015

Language:

english

File:

PDF, 332 KB

english, 2015

15

Fast GaN based Schottky diodes on Si(111) substrate with low onset voltage and strong reverse blocking

Treidel, Eldad Bahat, Hilt, Oliver, Wentzel, Andreas, Würfl, Joachim, Tränkle, Günther

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 364 KB

english, 2013

16

Lateral 1.8 kV β-Ga2O3 MOSFET with 155 MW/cm2 power figure-of-merit

Tetzner, Kornelius, Treidel, Eldad Bahat, Hilt, Oliver, Popp, Andreas, Anooz, Saud Bin, Wagner, Gunter, Thies, Andreas, Ickert, Karina, Gargouri, Hassan, Wurfl, Joachim

Journal:

IEEE Electron Device Letters

Year:

2019

File:

PDF, 581 KB

2019

17

Time and frequency dependent charge carrier mobility of one-dimensional chains with energetic disorder

Oliver Hilt, Laurens D.A Siebbeles

Journal:

Chemical Physics Letters

Year:

1997

Language:

english

File:

PDF, 450 KB

english, 1997

18

AlGaN/GaN/AlGaN double heterojunction HEMTs on n-type SiC substrates

Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl, Günther Tränkle

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 146 KB

english, 2010

19

Investigation of the Dynamic On-State Resistance of 600V Normally-off and Normally-on GaN HEMTs

Badawi, Nasser, Boecker, Jan, Hilt, Oliver, Bahat-Treidel, Eldad, Wuerfl, Hans-Joachim, Dieckerhoff, Sibylle

Journal:

IEEE Transactions on Industry Applications

Year:

2016

Language:

english

File:

PDF, 4.08 MB

english, 2016

20

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Meneghini, Matteo, Hilt, Oliver, Wuerfl, Joachim, Meneghesso, Gaudenzio

Journal:

Year:

2017

Language:

english

File:

PDF, 4.22 MB

english, 2017

21

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Fleury, Clément, Capriotti, Mattia, Rigato, Matteo, Hilt, Oliver, Würfl, Joachim, Derluyn, Joff, Steinhauer, Stephan, Köck, Anton, Strasser, Gottfried, Pogany, Dionyz

Journal:

Microelectronics Reliability

Year:

2015

Language:

english

File:

PDF, 1.15 MB

english, 2015

22

Accelerated generation of free radicals by iron oxide nanoparticles in the presence of an alternating magnetic field

Wydra, Robert J., Oliver, Catherine E., Anderson, Kimberly W., Dziubla, Thomas D., Hilt, J. Zach

Journal:

Year:

2015

Language:

english

File:

PDF, 1.32 MB

english, 2015

23

SPIE Proceedings [SPIE SPIE Defense, Security, and Sensing - Orlando, Florida (Monday 5 April 2010)] Signal and Data Processing of Small Targets 2010 - An assignment based distributed resource manager

Poore, Aubrey B., Drummond, Oliver E., Danford, Scott, Hilt, Matthew J.

Year:

2010

Language:

english

File:

PDF, 775 KB

english, 2010

24

Colon interposition for esophageal replacement: a single-center experience

Pietro Renzulli, Alexander Joeris, Oliver Strobel, Annemarie Hilt, ChristophA. Maurer, Waldemar Uhl, MarkusW. Büchler

Journal:

Langenbeck's Archives of Surgery

Year:

2004

Language:

english

File:

PDF, 121 KB

english, 2004

25

Ni/Au–Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOS HEMTs

Blaho, Michal, Gregušová, Dagmar, Jurkovič, Michal, Haščík, Štefan, Fedor, Ján, Kordoš, Peter, Fröhlich, Karol, Brunner, Frank, Cho, Melani, Hilt, Oliver, Würfl, Joachim, Kuzmík, Ján

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.78 MB

english, 2013

26

Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC Substrates

Hilt, Oliver, Kotara, Przemyslaw, Brunner, Frank, Knauer, Arne, Zhytnytska, Rimma, Wurfl, Joachim

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.56 MB

english, 2013

27

Self-Heating in GaN Transistors Designed for High-Power Operation

Kuzmik, Jan, Tapajna, Milan, Valik, Lukas, Molnar, Marian, Donoval, Daniel, Fleury, Clement, Pogany, Dionyz, Strasser, Gottfried, Hilt, Oliver, Brunner, Frank, Wurfl, Joachim

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 2.37 MB

english, 2014

28

A highly efficient GHz switching GaN-based synchronous buck converter module

Wentzel, Andreas, Hilt, Oliver, WÃ¼rfl, Joachim, Heinrich, Wolfgang

Journal:

International Journal of Microwave and Wireless Technologies

Year:

2020

File:

PDF, 593 KB

2020

29

Engineered linearity of GaN-based HEMTs power devices by tailoring transfer characteristics

Eldad Bahat-Treidel, Ibrahim Khalil, Oliver Hilt, Joachim Würfl, Günther Tränkle

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 338 KB

english, 2009

30

[IEEE ESSDERC 2015 - 45th European Solid-State Device Research Conference - Graz, Austria (2015.9.14-2015.9.18)] 2015 45th European Solid State Device Research Conference (ESSDERC) - E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator

Capriotti, Mattia, Fleury, Clement, Bethge, Ole, Rigato, Matteo, Lancaster, Suzanne, Pogany, Dionyz, Strasser, Gottfried, Bahat-Treidel, Eldad, Brunner, Oliver Hilt Frank, Wurfl, Joachim

Year:

2015

Language:

english

File:

PDF, 1.11 MB

english, 2015

31

Punch-through voltage enhancement scaling of AlGaN/GaN HEMTs using AlGaN double heterojunction confinement

Eldad Bahat-Treidel, Oliver Hilt, Fank Brunner, Joachim Würfl, Günther Tränkle

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 405 KB

english, 2009

32

Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs

Frank Brunner, Eldad Bahat-Treidel, Melanie Cho, Carsten Netzel, Oliver Hilt, Joachim Würfl, Markus Weyers

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 222 KB

english, 2011

33

[IEEE 2013 15th European Conference on Power Electronics and Applications (EPE) - Lille, France (2013.09.2-2013.09.6)] 2013 15th European Conference on Power Electronics and Applications (EPE) - Evaluation of 600V GaN and SiC Schottky diodes at different temperatures

Badawi, Nasser, Bahat-Treidel, Eldad, Dieckerhoff, Sibylle, Hilt, Oliver, Wurfl, Joachim

Year:

2013

Language:

english

File:

PDF, 446 KB

english, 2013

34

Time and frequency dependent charge carrier mobility on one-dimensional chains with energetic disorder for polaron and Miller–Abrahams type hopping

Oliver Hilt, Laurens D.A Siebbeles

Journal:

Chemical Physics

Year:

1998

Language:

english

File:

PDF, 120 KB

english, 1998

35

SiC and GaN devices – wide bandgap is not all the same

Kaminski, Nando, Hilt, Oliver

Journal:

IET Circuits Devices & Systems

Year:

2014

Language:

english

File:

PDF, 714 KB

english, 2014

36

WSiN Cap Layer for Improvement of Ohmic Contact Morphology in AlGaN/GaN High Electron Mobility Transistors

Lu, Chung Yu, Hilt, Oliver, Lossy, Richard, Chaturvedi, Nidhi, John, Wilfred, Chang, Edward Yi, Würfl, Joachim, Tränkle, Günther

Journal:

Japanese Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 217 KB

english, 2009

37

[IEEE 2018 International Power Electronics Conference (IPEC-Niigata 2018 –ECCE Asia) - Niigata, Japan (2018.5.20-2018.5.24)] 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia) - Dynamic drift effects in GaN power transistors: Correlation to device technology and mission profile

Wurfl, Joachim, Bahat-Treidel, Eldad, Hilt, Oliver, Troppenz, Maria, Wolf, Mihaela, Bocker, Jan, Kuring, Carsten, Dieckerhoff, Sibylle

Year:

2018

Language:

english

File:

PDF, 1.01 MB

english, 2018

38

[IEEE 2015 IEEE Energy Conversion Congress and Exposition - Montreal, QC, Canada (2015.9.20-2015.9.24)] 2015 IEEE Energy Conversion Congress and Exposition (ECCE) - Investigation of the dynamic on-state resistance of 600V normally-off and normally-on GaN HEMTs

Badawi, Nasser, Hilt, Oliver, Behat-Treidel, Eldad, Bocker, Jan, Wurfl, Joachim, Dieckerhoff, Sibylle

Year:

2015

Language:

english

File:

PDF, 760 KB

english, 2015

39

Lateral 1.8 kV β-Ga2O3 MOSFET with 155 MW/cm2 power figure-of-merit

Tetzner, Kornelius, Treidel, Eldad Bahat, Hilt, Oliver, Popp, Andreas, Anooz, Saud Bin, Wagner, Gunter, Thies, Andreas, Ickert, Karina, Gargouri, Hassan, Wurfl, Joachim

Journal:

IEEE Electron Device Letters

Year:

2019

File:

PDF, 581 KB

2019

40

Positive hole mobility in liquid xenon

Oliver Hilt, Werner F. Schmidt

Journal:

Chemical Physics

Year:

1994

Language:

english

File:

PDF, 679 KB

english, 1994

41

Lateral and vertical power transistors in GaN and Ga2O3

Hilt, Oliver, Bahat Treidel, Eldad, Wolf, Mihaela, Kuring, Carsten, Tetzner, Kornelius, Yazdani, Hossein, Wentzel, Andreas, Würfl, Joachim

Journal:

IET Power Electronics

Year:

2019

File:

PDF, 4.96 MB

2019

42

High-voltage normally OFF GaN power transistors on SiC and Si substrates

Hilt, Oliver, Bahat-Treidel, Eldad, Knauer, Arne, Brunner, Frank, Zhytnytska, Rimma, Würfl, Joachim

Journal:

Year:

2015

Language:

english

File:

PDF, 1.09 MB

english, 2015

43

ECS Transactions [ECS 220th ECS Meeting - Boston, MA (October 9 - October 14, 2011)] - (Invited) High Voltage Normally-Off Transistors and Efficient Schottky Diodes based on GaN Technology

Wuerfl, Joachim, Bahat-Treidel, Eldad, Brunner, Frank, Cho, M., Hilt, Oliver, Knauer, Arne, Kotara, Przemyslaw, Weyers, Markus, Zhytnytska, Rimma

Year:

2011

Language:

english

File:

PDF, 2.08 MB

english, 2011

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